INAUGURATION - KEYNOTE SPEAKER “Anything you can do ‘GaN’ can do better”: III-Nitrides as a Universal Compound Semiconductor Dr. Ian Ferguson, Fellow of IEEE, IOP and SPIE Vice Provost and Dean of Engineering and Computing Missouri University of Science and Technology 305 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409, USA Dr. S. Sivanathan Distinguished Professor of Physics, Director - Microphysics Laboratory Department of Physics, University of Illinois at Chicago 845 W. Taylor St. MC 273, Room 2360 SES, Chicago IL 60607, USA Title : Solar power and the technology INTERNATIONAL PLENARY SPEAKERS Dr. Thomas F. Kuech National Academy of Engineering Milton J. and A. Maude Shoemaker Chair of Chemical Engineering UW-Foundation Chair Beckwith-Bascom Professor University of Wisconsin – Madison, Department of Chemical and Biological Engineering 1415 Engineering Dr., Madison, WI 53711. USA Title : Vapor Phase Growth of Complex and Metastable Semiconductor Alloys Dr. Michel Pons Directeur Science et Ingénierie des Matériaux et Procédés SIMaP (Phelma Campus), UMR 5266 Grenoble INP, UJF, CNRS 1130 rue la Piscine, BP 75, 38402 Saint Martin D’Heres, FRANCE Title : Functional properties and microstructure of AlN thin films and coatings grown by CVD Dr. Mohammed Henini Professor of Applied Physics International Postgraduate Recruitment&International Postgraduate Admissions Tutor Nottingham Nanotechnology and Nanoscience Centre (NNNC) School of Physics & Astronomy, University of Nottingham, Nottingham NG7 2RD, UK Title : Development of Advanced Semiconductor Materials and Devices For Next Generation Photovoltaics: Opportunities And Challenges Dr. R. Muralidharan Solid State Physics Laboratory Lucknow Road, Delhi-110 054, INDIA Title : Advances in GaN Dr. V. Ramgopal Rao Department of Electrical Engineering IIT Bombay, Powai, Mumbai 400 076, India. Title : Bottom-up meets Top-down: An Integrated Approach for Future Nanoscale Devices Dr. Ng Geok Ing, Associate Professor, Director, Silicon Technologies Centre of Excellence Nanyang Technological University, Research TechnoPlaza, 8th Storey, 50 Nanyang Drive, Singapore 637553 Title : Towards Cost-Effective HEMTs: Are We There Yet? Dr. Gen Sazaki Laboratory for Phase Transition Dynamics of Ice The Institute of Low Temperature Science, Hokkaido University, N19-W8, Kita-ku, Sapporo 060-0819, JAPAN Title : Direct visualization of surface melting processes: an example found on ice crystal surfaces Dr. Harri Lipsanen Professor, Head of Department Department of Micro- and Nanosciences, Micronova Aalto University, P.O. Box 13500, FI-00076 Aalto, FINLAND Title : III-V semiconductor nanowires for nanotechnology applications INTERNATIONAL INVITED SPEAKERS Dr. M. Kuball Center for Device Thermography and Reliability (CDTR) HH Wills Physics Laboratory, University of Bristol, United Kingdom. Title : Challenges for GaN Electronics - Of Dragons and Knights Dr. Shin Yokoyama Associate Director, Research Institute for Nanodevice and Bio Systems Hiroshima University, Japan 1-4-2 Kagamiyama, HIgashihirorshima 739-8527, Japan Title: Si Ring Resonator and Photonic Crystal Resonator Biosensors Prof Tae Won Kang Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, KOREA Title : Study on Properties and Applications of II-VI Nanostructures Dr. John V Kennedy, Principal Scientist, Environment ad Materials Division, National Isotope Centre, GNS Science, 30 Gracefield Road, P O Box 31312, Lower Hutt, 5010, New Zealand. Title : Electronic, magneto transport and magnetic properties of Gadolinium doped zinc oxide Dr. S. Suresh 1CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz,France Title : Nanoselective area growth of III-nitrides for next generation devices. Dr. L. Lazzarini IMEM- CNR Parma, ITALY Title : Phase change GeSbTe based nanowires for data storage devices Dr. Hoe Tan Department of Electronic Materials Engineering Research School of Physics and Engineering Australian National University, Canberra, ACT0200, Australia Title : Semiconductor nanowires for optoelectronic device applications Dr. Alexander Crisci, Institut polytechnique de Grenoble (Grenoble INP) - Phelma Bâtiment Recherche Phelma / SIMaP / Bureau 116 1130 rue de la Piscine, 38 402 Saint Martin d'Hères, FRANCE Title: Contribution of Electron Probe Microanalysis characterisation scheme of thin layers (EPMA) to the Dr. Eric Faulques Directeur de Recherche CNRS UMR6502 Université de Nantes, Institut des Matériaux Jean Rouxel 2 rue de la Houssinière, F-44322 Nantes, FRANCE Title: Studies of crystalline nanowires grown inside carbon nanotubes Dr. Jesbains Kaur Universiti Teknologi Malaysia (UTM),(University of Technology Malaysia) Jalan Semarak 54100 Kuala Lumpur, Malaysia. Title : Dependence of microstructures in MOVPE AlN on annealing temperature of Sapphire substrate INDIAN INVITED SPEAKERS Dr. Vinay Gupta Department of Physics and Astrophysics University of Delhi, New Delhi Title : Development of multifunctional materials for electronic devices Dr. Arnab Bhattacharya Dept. of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research, Mumbai Title: MOVPE growth of III-nitrides on 2D layered materials Dr Anirban Bhattacharyya Institute of Radiophysics and Electronics, University of Calcutta 92 Acharya Prafulla Chandra Road, Kolkata Prof Anand P. Pathak ,FNASc, C Phys, F Inst P School of Physics, University of Hyderabad,Central University P O, Hyderabad Title: Ion Beam Studies of Semiconductor Nanostructures Dr. R. Jeyakumar Physics of Energy Harvesting Divisio,National Physical Laboratory, New Delhi Title: Fabrication of c-Si solar cells using spin-on dopants Dr. K. Jeganathan Centre for Nanoscience & Nanotechnology,School of Physics, Bharathidasan University, Tiruchirappalli Title: Lattice matched and strained growth of InAlN/GaN heterostructure Dr. Govind, Physics of Energy Harvesting, National Physical Laboratory, New Delhi Title: High quality GaN films grown on different substrates by molecular beam epiatxy Dr. Rajendra Singh Department of Physics&Nanocale Research Facility Indian Institute of Technology Delhi, Hauz Khas, New Delhi Title: Fabrication and Characterization of GaN nanopillars for Applications in Nanoscale Devices Dr. S.K. Srivastava, Scientist, Silicon Solar Cells Group Physics of Energy Harvesting, National Physical Laboratory, New Delhi Title: Silicon nanowire arrays: A potential approach for efficient silicon solar cells Dr. Rajesh K. Sharma Solid State Physics Laboratory Lucknow Road, Delhi Title:Magneto-transport characterization of 2DEG in AlGaN/GaN HEMT structures Dr. Souvik Mahapatra Department of Electrical Engineering, IIT Bombay, Mumbai Title: Macroscopic and Stochastic Aspects of Negative Bias Temperature Instability in CMOS Devices and Circuits Dr. Srinivasan Raghavan, CeNSE, IISc, Bangalore Title: Controlling Growth of Graphene and MoS2 Dr. Nandita Dasgupta IIT , Chennai Title: III-Nitride MIS-HEMTs –Two approaches to reduce Gate Leakage Dr. K. Baskar Crystal Growth Centre, Anna University, Chennai Title:AlInGaN/AlN/GaN heterostructures grown by MOCVD Dr. J. Kumar Crystal Growth Centre, Anna University, Chennai Title: On Dilute Magnetic Semiconductor related issues in GaN Dr. R. THANGAVEL Department of Applied Physics,Indian School of Mines, Dhanbad. Title: Investigations on Zinc Oxide