固定 可変電流制限付き パワー・スイッチ NCP380量負荷短絡発生 設計 !"#$% & ' ( 55 mW (DFN ! )) &P " * + , MOSFET-集積. /$01負荷電23限 4! ,-超567短絡発生89'( :電2; :<=>[email protected]電2-目的&4C,3限 /$電23限 4!,D部EF#100 mA ~ 2.1 A &範G#HI調JK能L67/M部N:L67 -選O#P/$ !"&立QR?S間L立Q T?S間-3U6%LVB. !"WX&電2 YW-Z5/$ 01電[\1電[-超589 !"&\1]&' ( -^護6_M部逆電[`0a4b !"-'cde,/$ 過電2逆電[/過f状g発生. 6間FLAG h)!i01hj/$ !"h)! i+e,\1-ikce/h6% LVB.3U/$ www.onsemi.jp UDFN6 CASE 517AB TSOP−5 CASE 483 TSOP−6 CASE 318G MARKING DIAGRAMS 1 2 3 XXMG G 6 5 4 UDFN6 5 特長 •l2.5 V ~ 5.5 V&mn範G •l70 mW&MOSFET •l電23限: XXXAYWG G 1 TSOP−5 ♦l100 mA ~ 2.1 A&範G#HI調JK能 ♦lN:500 mA1 A1.5 A2 A2.1 A •lo電[h!ipj(UVLO) •lqrj bjs能M蔵 •lt,^護 •lqrjbur •l逆電[^護 •lv9部wx範G:−40°C ~ 125°C •likce/h&+e,(EN/EN) •lIEC61000−4−2(4C,y4)z{ ♦l8.0 kV (v触|電) ♦l15 kV (}X|電) • UL ti E343275認:~ • 車載V8L3U&- 要L6& NCVrc!i •l鉛r!)- XXXAYWG G 1 TSOP−6 XXX A M Y W G = Specific Device Code =Assembly Location = Date Code = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 20 of this data sheet. 代表的アプリケーション •l!j! •lUSBje •lTV © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 14 1 Publication Order Number: NCP380JP/D NCP380, NCV380 USB DATA USB INPUT 5V OUT IN Rfault 100 kW D+ D− VBUS GND 1 mF 120 mF USB Port NCP380 FLAG FLAG EN ILIM* EN Rlim GND *For Adjustable Version Only. Figure 1. Typical Application Circuit OUT 1 ILIM* 2 FLAG PAD1 3 6 IN OUT 1 5 GND GND 2 FLAG 3 4 EN 5 IN 4 EN TSOP−5 UDFN6 (Top view) IN 1 6 OUT GND 2 5 ILIM* EN 3 4 FLAG TSOP−6 *For adjustable version only, otherwise not connected. Figure 2. Pin Connections Table 1. PIN FUNCTION DESCRIPTION Pin Name Type Description EN INPUT GND POWER Ground connection; IN POWER Power-switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as close as possible to the IC. FLAG OUTPUT Active-low open-drain output, asserted during overcurrent, overtemperature or reverse-voltage conditions. Connect a 10 kW or greater resistor pull-up, otherwise leave unconnected. OUT OUTPUT Power-switch output; connect a 1 mF ceramic capacitor from OUT to GND as close as possible to the IC is recommended. A 1 mF or greater ceramic capacitor from OUT to GND must be connected if the USB requirement (i.e.120 mF capacitor minimum) is not met. ILIM* INPUT PAD1** THERMAL Enable input, logic low/high (i.e. EN or EN) turns on power switch External resistor used to set current-limit threshold; recommended 5 kW < RILIM < 250 kW. Exposed Thermal Pad: Must be soldered to PCB Ground plane *(For adjustable version only, otherwise not connected. **For DFN version only. www.onsemi.jp 2 NCP380, NCV380 Table 2. MAXIMUM RATINGS Rating Symbol Value Unit VIN , VOUT −7.0 to +7.0 V VEN, VILIM, VFLAG, VIN, VOUT −0.3 to +7.0 V ISINK 1 mA From IN to OUT Pins: Input/Output (Note 1) IN, OUT, EN, ILIM, FLAG, Pins: Input/Output (Note 1) FLAG Sink Current ILIM Source Current ILIM 1 mA ESD Withstand Voltage (IEC 61000−4−2) (Output Only, when Bypassed with 1.0 mF Capacitor Minimum) ESD IEC 15 Air, 8 Contact kV Human Body Model (HBM) ESD Rating (Note 2) ESD HBM 2,000 V Machine Model (MM) ESD Rating (Notes 2 and 3) ESD MM 200 V Latch-up Protection (Note 4) Pins IN, OUT, EN, ILIM, FLAG LU mA Maximum Junction Temperature Range (Note 6) TJ −40 to +TSD °C Storage Temperature Range TSTG −40 to +150 °C Moisture Sensitivity (Note 5) MSL Level 1 100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. () !"#$%&'() *+,(-./ 0123*!456789#!"#$ 1. According to JEDEC standard JESD22−A108. 2. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115 for all pins. 3. Except EN pin, 150 V. 4. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78 class II. 5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020. 6. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation. Table 3. OPERATING CONDITIONS Symbol Parameter VIN Operational Power Supply VEN Enable Voltage Conditions Min Typ Max Unit 2.5 − 5.5 V 0 − 5.5 TA Ambient Temperature Range −40 25 +85 TJ °C Junction Temperature Range −40 25 +125 °C RILIM Resistor from ILIM to GND Pin 5.0 − 250 kW ISINK FLAG Sink Current CIN COUT Decoupling Output Capacitor RqJA Thermal Resistance Junction-to-Air IOUT PD − − 1.0 mA 1.0 − − mF USB Port per Hub 120 − − mF UDFN−6 Package (Notes 7 and 8) − 120 − °C/W TSOP−5 Package (Notes 7 and 8) − 305 − °C/W TSOP−6 Package (Notes 7 and 8) − 280 − °C/W UDFN−6 Package − − 2.1 A TSOP−5, TSOP−6 Package − − 1.0 A Decoupling Input Capacitor Maximum DC Current Power Dissipation Rating (Note 9) TA v 25°C TA = 85°C UDFN−6 Package − 830 − mW TSOP−5 Package − 325 − mW TSOP−6 Package − 350 − mW UDFN−6 Package − 325 − mW TSOP−5 Package − 130 − mW TSOP−6 Package − 145 − mW 7. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation. 8. The RqJA is dependent of the PCB heat dissipation. Board used to drive this data was a 2” × 2” NCP380EVB board. It is a 2 layers board with 2-once copper traces on top and bottom of the board. Exposed pad is connected to ground plane for UDFN−6 version only. 9. The maximum power dissipation (PD) is given by the following formula: T JMAX * T A PD + R qJA www.onsemi.jp 3 NCP380, NCV380 Table 4. ELECTRICAL CHARACTERISTICS (Min & Max Limits apply for TA between −40°C to +85°C and TJ up to +125°C for VIN between 2.5 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = +25°C and VIN = 5 V.) Parameter Symbol Conditions Min Typ Max Unit mW POWER SWITCH RDS(on) Static Drain-source On-state Resistance DFN Package TSOP Package TR Output Rise Time TF Output Fall Time VIN = 5 V –40°C < TJ < 125°C − 55 75 2.5 V < VIN < 5.5 V –40°C < TJ < 125°C − − 110 VIN = 5 V –40°C < TJ < 125°C − 70 95 2.5 V < VIN < 5.5 V –40°C < TJ < 125°C − − 135 VIN = 5 V CLOAD = 1 mF, RLOAD = 100 W (Note 10) 0.3 1.0 1.5 VIN = 2.5 V 0.2 0.65 1.0 VIN = 5 V 0.1 − 0.5 VIN = 2.5 V 0.1 − 0.5 1.2 − − mW ms ENABLE INPUT EN OR EN VIH High-level Input Voltage V VIL Low-level Input Voltage − − 0.4 V IEN Input Current VEN = 0 V, VEN = 5 V −0.5 − 0.5 mA TON Turn On Time CLOAD = 1 mF, RLOAD = 100 W (Note 11) 2.0 3.0 4.0 ms TOFF Turn Off Time 1.0 − 3.0 ms RILIM = 20 kW (Note 11) 1.02 1.20 1.38 A RILIM = 40 kW (Notes 11 and 13) 0.595 0.700 0.805 Fixed 0.5 A (Note 12) 0.5 0.58 0.65 Fixed 1.0 A (Note 12) 1.0 1.15 1.3 Fixed 1.5 A (Note 12) 1.5 1.75 1.9 Fixed 2.0 A (Note 12) 2.0 2.25 2.5 Fixed 2.1 A (Note 12) 2.1 2.25 2.5 CURRENT LIMIT IOCP Current-limit Threshold (Maximum DC Output Current IOUT Delivered to Load) VIN = 5 V A TDET Response Time to Short Circuit − 2.0 − ms TREG Regulation Time 1.8 3.0 4.0 ms TOCP Overcurrent Protection Time 14 20 26 ms − 100 − mV 4.0 6.0 9.0 ms 7.0 10 15 ms VIN = 5 V REVERSE-VOLTAGE PROTECTION VREV Reverse-voltage Comparator Trip Point (VOUT – VIN) TREV Time from Reverse-voltage Condition to MOSFET Switch Off & FLAG Low TRREV Re-arming Time VIN = 5 V UNDERVOLTAGE LOCKOUT VUVLO IN Pin Low-level Input Voltage VIN Rising 2.0 2.3 2.4 V VHYST IN Pin Hysteresis TJ = 25°C 25 − 60 mV TRUVLO Re-arming Time 7.0 10 15 ms − 1.0 2.1 mA − − − − − − 90 80 70 − − 1.0 SUPPLY CURRENT IINOFF Low-level Output Supply Current IINON High-level Output Supply Current IREV Reverse Leakage Current VIN = 5 V, No Load on OUT, Device OFF VEN = 0 V or VEN = 5 V VIN = 5 V, Device Enable 2 A and 2.1 A Versions 1 A and 1.5 A Current Versions 0.5 A Current Version VOUT = 5 V, VIN = 0 V www.onsemi.jp 4 TJ = 25°C mA mA NCP380, NCV380 Table 4. ELECTRICAL CHARACTERISTICS (continued) (Min & Max Limits apply for TA between −40°C to +85°C and TJ up to +125°C for VIN between 2.5 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = +25°C and VIN = 5 V.) Symbol Parameter Conditions Min Typ Max Unit mV FLAG PIN FLAG Output Low Voltage IFLAG = 1 mA 400 ILEAK Off-state Leakage VFLAG = 5 V 1.0 mA TFLG FLAG Deglitch FLAG De-assertion Time due to Overcurrent or Reverse Voltage Condition 4.0 6.0 9.0 ms TFOCP FLAG Deglitch FLAG Assertion due to Overcurrent 6.0 8.0 12 ms VOL THERMAL SHUTDOWN TSD Thermal Shutdown Threshold 140 °C TSDOCP Thermal Regulation Threshold 125 °C TRSD Thermal Shutdown Rearming Threshold 115 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. () :;<=>?@0ABC1D!AEF&*GHIJ#KLM?NOPQ1"#$R0HISN:;TUVW *XKLM?NOPQ1?Y'&01+,!"#$ 10. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground, See Figure 3. 11. Adjustable current version, RILIM tolerance ±1%. 12. Fixed current version. 13. Not production test, guaranteed by characterization. VIN IN OUT 1 mF CLOAD RLOAD NCP380 GND Figure 3. Test Configuration 50% VEN TR TF VEN TOFF VOUT TON VOUT 90% 10% 90% 10% Figure 4. Voltage Waveform www.onsemi.jp 5 10% NCP380, NCV380 BLOCK DIAGRAM Blocking Control IN ILIM* OUT Current Limiter Vref TSD Gate Driver UVLO Osc GND Flag /FLAG EN EN Block Control Logic and Timer *For adjustable version only, otherwise not connected. Figure 5. Block Diagram www.onsemi.jp 6 NCP380, NCV380 Ton + TR Figure 6. Ton Delay and Trise Time Toff + Tfall Figure 7. Toff Delay and Tfall www.onsemi.jp 7 NCP380, NCV380 Figure 8. Turn On a Short TSD Warning Treg TOCP Figure 9. 2 W Short on Output. Complete Regulation Sequence www.onsemi.jp 8 NCP380, NCV380 TFOCP TSD Warning VIN VOUT IIN /FLAG Figure 10. OCP Regulation and TSD Warning Event TOCP Treg Figure 11. Timer Regulation Sequence During 2 W Overload www.onsemi.jp 9 NCP380, NCV380 Figure 12. Direct Short on OUT Pin Figure 13. From Timer Regulation to Load Removal Sequence www.onsemi.jp 10 NCP380, NCV380 TFOCP VOUT IOUT /FLAG Figure 14. From No Load to Direct Short Circuit VREV VOUT VIN TFREV /FLAG Figure 15. Reverse Voltage Detection www.onsemi.jp 11 NCP380, NCV380 T RREV Figure 16. Reverse Voltage Removal 2.4 2.38 2.36 UVLO (V) 2.34 2.32 2.3 2.28 2.26 2.24 UVLO vs. Temperature 2.22 UVLO − hysteresis vs. Temperature 2.2 −50 0 50 100 150 Temperature (°C) Figure 17. Undervoltage Threshold (Falling) and Hysteresis www.onsemi.jp 12 NCP380, NCV380 Low−Level Output Supply Current vs Vin −40°C 25°C 85°C 125°C 2.0 1.8 1.6 IINOFF (mA) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.4 2.9 3.4 3.9 4.4 4.9 5.4 Vin(V) Figure 18. Standby Current vs Vin High−Level Output Supply Current vs Vin −40°C 25°C 85°C 125°C 100 90 80 70 IINON (mA) 60 50 40 30 20 10 0 2.4 2.9 3.4 3.9 4.4 Vin(V) Figure 19. Quiescent Current vs Vin www.onsemi.jp 13 4.9 5.4 NCP380, NCV380 TSOP Package 100 95 RDS(on) vs. Temperature 90 85 75 70 65 60 55 50 45 40 −50 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Temperature (°C) Figure 20. RDS(on) vs Temperature, TSOP Package mDFN Package 100 95 90 RDS(on) vs. Temperature 85 RDS(on) (mW) RDS(on) (mW) 80 80 75 70 65 60 55 50 45 40 −50 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Temperature (°C) Figure 21. RDS(on) vs Temperature, mDFN Package www.onsemi.jp 14 NCP380, NCV380 機能説明 概要 VOUT Thermal Regulation Threshold NCP380量負荷短絡/過電2&8 9\1給電[-^護6_設計 P "*+,MOSFET !"# $5.MOSFETo電[ t,*!jp/逆電[状g&発生X bur/$K()#D部 EF-用.電23限 4!,-hW 6%L#P/$NCP380qrj bj 路VB.電2V電[)-Z3#P/ $ IOUT IOCP TOCP '( 示2r¢£&bt;: <=\?/$ • urr¢£: MOSFETS間TOCP &間ur?wxoT/$ • ur¢£:S間TREG&間;:<電2= #$電2IOCP4C,;:</$ NCP38001電2IOCP 4!,-超5 6L:電2;:<=>?@A?/$01 電[負荷.oT/$ • 量負荷-!jW&8901電 [a'電[/#oT/$NCP380 a'&電6/#電2-IOCP 4 !,3限/$ bt;:<=#高f&|¥(短絡&89 ¦)-§理wxmn¨©MZ56%L#P/ $ 過電2状gª?除767+e,« >?@5¬6/#NCP380ur¢£/ur r¢£,留/?/$ VOUT Drop due to Capacitor Charge IOUT 備考:VB.&;:<= -用6%LK能#$®¯用° . ud±aib&²理³/#´ 9 Aµ¶· $ IOCP Figure 22. Heavy capacitive load • 過負荷S電2IOCP&3限電[ FLAGインジケータ FLAG«過電2逆電[/過f状g Shj6u4 MOSFET#$電1 #過電2/逆電[r¸ ,j`089¹6W!"除 S 間(電}的特º表-»¼)経過½FLAG« hj/$%&s能&7¾# 量負荷&電01#&電[過¿XFLAG «h?/µÀ$過電2r¸,j¹ 6W!"除 S間TFOCP 逆電[r¸,j& 89TREV #$r¸,j除 6/# FLAG«h&//#$r¸,j除 ½TFGL &終A?FLAG«? /$ 負荷B.oT/$ I OCP TREG Figure 24. Short circuit 過電流保護 V OUT + R LOAD Timer Regulation Mode (eq. 1) VOUT IOCP × RLOAD IOUT IOCP Figure 23. Overload • 短絡P負荷発生89電2短絡 低電圧ロックアウト 除 6/#TDETS間MIOCP3限/ $01短絡67非¡o 電[v続 6L"!&v9部wxTSDOCP-超5 '( t,*!jp(MOSFET bur)\?/$ o電[h!ipj(UVLO)路M蔵. 6 _VIN &電[VUVLO V?o 間01\ 17¬>Á//#$VIN 電[VUVLO V? 高¶6LzÂS間TRUVLO½ k01 &Ãv続-試/$%&路過¿¹6Ä £耐º-6VHYST Å k -Â5. / $ www.onsemi.jp 15 NCP380, NCV380 熱検知 ブロッキング制御 wxTSD -超589t,*! jpMOSFET-bur/$Å k Æ6_wxTRSDÇÈ 6/#MOSFETbu/µÀ$ eh!ÒW3U路MOSFET&Ó ->?@5/$'( ur&LPÔ'c u#OUT7¬IN26i電2IREV 3限/$%&=#Ô'cu &ÄIN«v続ÕqOUT «v続/$mn状g#Ô'c u&ÄOUT«v続Õq IN«v続.電É&|電防Ö/ $ 逆電圧保護 TREVX01電[\1電[V?VREV·高¶ 6L逆電[路電É-^護6_01>Á/$MOSFET-Ãbu6 %LÊS間TREV+zÂS間TRREV 要 #$ イネーブル入力 +e,«h)!iËÌ(CMOS/ TTLÍÎ)#e67GND/VINv続 6 要Æ?/$ENh)!ih/ Æ6L'( bu/$ENh )!i/hÆ6L'( b urÏ費電2IINOFF/#ÐÑ/$ アプリケーション情報 消費電力 可変電流制限プログラミング (可変バージョンのみ) '( &v9部wxÔ4pj ×Gwx'( 環ئ&要ÙVB.< /$7v9部wxÚÛ響-Ü56要Ù MOSFET&Ï費電1#$%&VÝ :6L通¡=#&Ï費電1Lv9部wx #計算#P/$ R D + R DS(on) %%# PD RDS(on) IOUT 2 (eq. 2) = Ï費電1(W) = MOSFET&uEF(W) = 01電2(A) TJ + PD %%# TJ RqJA TA ǒIOUTǓ NCP380xMUAJAALNCP380xSNAJAAàá mDFNLTSOP6&!)#âÕ bt VB.自由電23限-76%L0ã/$ ¬ L,pEF-v続6Ilim« 用ä.?àVB.P 電2&調 節K能#$過電2&精x-確^6å許æ 0.1/1%&EF-用6%L-ç¶èé/ $ %&EF&選O° .HI'( ^護 \6%L¶継続用0ã6V USB電2-Úê設:6 要Æ?/$重 要,,%&,pEF-選O6際 R2]&id継続.電2給6% L#P6VT限電2-USB電2V?間 違 ¶高¶6%L#$ ëT&ì&選O&表idí&USB 電2jîzEF選OLîz/Ú過電2P -ï/$ R qJA ) T A (eq. 3) = v9部wx(°C) = !)&fEF(°C/W) = ×Gwx(°C) ;:<=#&Ï費電1&関Þ 負荷.<6電[降TVIN−VOUT-考ß 6L計算#P/$ P D + ǒV IN * R LOAD %%# PD VIN RLOAD IOCP I OCPǓ I OCP (eq. 4) = Ï費電1(W) = \1電[(V) = 負荷EF(W) = 01;:<電2(A) www.onsemi.jp 16 NCP380, NCV380 Table 5. RESISTOR SELECTION FOR ADJUSTABLE CURRENT LIMIT VERSION Min Current Limit Value (A) Theoric Resistor Value (kW) Selected Resistor Value (kW) 1% or 0.1% Typical OCP Target Value (A) Maximum Current Value (A) 0.5 44.2 44.2 0.59 0.67 0.6 37.5 37.4 0.71 0.81 0.7 32.2 31.6 0.825 0.95 0.8 27.7 27.4 0.94 1.08 0.9 24.0 23.7 1.06 1.22 1.0 21.0 21 1.18 1.35 1.1 18.5 18.2 1.3 1.49 1.2 16.6 16.5 1.41 1.62 1.3 14.6 14.3 1.53 1.76 1.4 13.0 13 1.65 1.9 1.5 11.4 11.3 1.78 2.05 1.6 10.4 10.2 1.88 2.17 1.7 9.2 9.09 2.01 2.31 1.8 8.3 8.25 2.12 2.438 1.9 7.4 7.32 2.23 2.56 2.0 6.5 6.49 2.36 2.7 2.1 5.6 5.49 2.48 2.85 表&“T限電2”過電2起m. 状g# &idí給6DC電2-表. /$ ILIM 5 ) 45.256 ILIM 4 * 155.25 ILIM 3 ) 274.39 ILIM 2 * 267.6 ILIM ) 134.21 Rlim Versus OCP Average RLIM (kW) Rlim + −5.2959 2番目&行ëT&7¬ð_¬îz電2b ñ!j-ò6_&EF理論#: 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 RLIM vs. OCP Average 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Current Limit (A) Figure 25. RLIM Curve vs. Current Limit www.onsemi.jp 17 2.4 2.6 2.8 (eq. 5) NCP380, NCV380 HI&9Aµ.EF選 O6L過電2P &許ëT& .ð_¬/: IOCP min + 1.6915129 * 0.0330328 ) 0.0000009 Rlim ) 0.0011207(Rlim * 22.375) 2 * 0.0000451 (Rlim * 22.375) 3 ) (eq. 6) (Rlim * 22.375) 4 IOCP max + 2.2885175 * 0.0446914 ) 0.0000012 Rlim ) 0.0015163(Rlim * 22.375) 2 * 0.000061 (Rlim * 22.375) 3 ) (eq. 7) (Rlim * 22.375) 3 ) (eq. 8) (Rlim * 22.375) 4 IOCPtyp + 1.9900152 * 0.0388621 ) 0.0000011 Rlim ) 0.0013185(Rlim * 22.375) 2 * 0.0000531 (Rlim * 22.375) 4 ÚóîzÚ電2ÕeëT&Wr&通 ?L?/: 3.0 2.8 IOCP min vs. RLIM 2.6 IOCP vs. RLIM 2.4 IOCP max vs. RLIM 2.2 2.0 ILIM (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 RLIM (kW) Figure 26. Current Threshold vs. Rlim Resistor PCBに関する推奨事項 2°理由7¬EF6 kW−47 kW&範G-考ß 6%L-èé/$ o EF&S電2許高 電24C, ôR¾¬/$M部電1õöº能VB.w xV6Û響-考ß6LÚ2.4 Aîz-mDFN ! ) 設 : 6 % L 0 ã / $TSOP6 ()関.製÷:電23U= \6øt,*!jp=\6K能 ºÆ6åÚ#1.2 Aèé?/$ ùú#15%&精x-維û S高 EF#50 kW/#用0ã/$高 &89 電2P 500 mAV?o¶?/$à&å %&89精x落Q6%LÆ?/$ NCP380Ú:ü2 A&PMOSFET-集積. 6 _PCB'I,,-遵ý.a7 ¬&f-適>逃 要Æ?/$ 要 .fþÿ-高_6_UDFN6 PAD1-W 4v続.¶· $%&! ず W4v続/$PCB面積-増 %L#!)&RqJA-oÐ#P/² A?Ï費電1増/$ www.onsemi.jp 18 www.onsemi.jp 19 Figure 27. USB Host Typical Application USB Port GND D− D+ VBUS OUT 2 3 USB Transceiver GND 1 IN LDO 3.3 V 10 mF GND D− 10 GND 3 2 1 EN DATA_OUT[x:0] DATA_IN[x:0] GND CRTL_OUT[x:0] SYS CRTL_IN[x:0] VCC 4 5 6 USB Host Controller /FLAG ILIM OUT NCP380 GND IN STATUS EN GPM21BR61C106KE15L VCC 12 VBUS(sense) CRTL[x:0] 11 DATA[x:0] D+ 1 4.7 mF Upstream USB Port 3 4 2 5 IN Power Supply 1 10 Downstream USB Port VCC 5 12 CRTL[x:0] VBUS(sense) 11 2 DATA[x:0] D+ 3 D− 4 GND GND USB Transceiver SYSTEM GPM31CR60J107ME39L 100 mF USB Port GND D− D+ VBUS NCP380, NCV380 NCP380, NCV380 Table 6. ORDERING INFORMATION Device Marking Active Enable Level Over Current Limit Evaluation Board UL Listed CB Scheme NCP380LSNAJAAT1G AAC Adj. NCP380LSNAJAGEVB Y Y NCP380LSN05AAT1G AC5 0.5 A NCP380LSN05AGEVB Y Y NCP380LSN10AAT1G AC6 1.0 A NCP380LSN10AGEVB Y Y NCP380LMUAJAATBG AA Adj. NCP380LMUAJAGEVB Y Y NCV380LMUAJAATBG* AN Adj. NCP380LMUAJAGEVB Y Y NCP380LMU05AATBG AE 0.5 A NCP380LMU05AGEVB Y Y NCP380LMU10AATBG AF 1.0 A NCP380LMU10AGEVB Y Y NCP380LMU15AATBG AG 1.5 A NCP380LMU15AGEVB Y Y NCV380LMU15AATBG* AQ 1.5 A NCP380LMU15AGEVB Y Y NCP380LMU20AATBG AL 2.0 A NCP380LMU20AGEVB Y Y NCP380HSNAJAAT1G AAD Adj. NCP380HSNAJAGEVB Y Y NCP380HSN05AAT1G AC7 0.5 A NCP380HSN05AGEVB Y Y NCP380HSN10AAT1G ADA 1.0 A NCP380HSN10AGEVB Y Y NCP380HMUAJAATBG AC Adj. NCP380HMUAJAGEVB Y Y Low NCV380HMUAJAATBG* AP Adj. NCP380HMUAJAGEVB Y Y NCP380HMU05AATBG AH 0.5 A NCP380HMU05AGEVB Y Y NCP380HMU10AATBG AJ 1.0 A NCP380HMU10AGEVB Y Y NCP380HMU15AATBG AK 1.5 A NCP380HMU15AGEVB Y Y NCP380HMU20AATBG AM 2.0 A NCP380HMU20AGEVB Y Y NCP380HMU21AATBG AU 2.1 A NCP380HMU21AGEVB Y Y High Package Shipping† TSOP−6 (Pb−Free) TSOP−5 (Pb−Free) UDFN6 (Pb−Free) TSOP−6 (Pb−Free) 3,000 Tape / Reel TSOP−5 (Pb−Free) UDFN6 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable www.onsemi.jp 20 NCP380, NCV380 PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517AB ISSUE C ! ! " ! # ! # ! ! A B D NOTE 5 PIN ONE REFERENCE ÍÍÍ ÍÍÍ ÍÍÍ E END VIEW TOP VIEW A3 A 6X & A1 NOTE 4 C SIDE VIEW DETAIL A D2 1 ÉÉÉ ÇÇÇ ÇÇÇ EXPOSED Cu DETAIL B SEATING PLANE L MOLD CMPD A1 MILLIMETERS MIN MAX $% % $ % & '% ((( DETAIL B ALTERNATE CONSTRUCTIONS L L 3 ÇÇ ÉÉ A3 DIM A A1 A3 b D D2 E E2 e L L1 L1 DETAIL A E2 ALTERNATE TERMINAL CONSTRUCTIONS 6 4 e BOTTOM VIEW 6X RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE 1.70 6X 0.47 b 2.30 0.95 1 0.65 PITCH 6X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.jp 21 NCP380, NCV380 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE K NOTE 5 2X D 5X M 2X B 5 1 4 2 S 3 K B DETAIL Z G A A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. TOP VIEW DIM A B C D G H J K M S DETAIL Z J C H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.jp 22 NCP380, NCV380 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D H 6 E1 5 ÉÉÉ 1 NOTE 5 2 4 L2 GAUGE PLANE E 3 L M b A1 SEATING PLANE DIM A A1 b c D E E1 e L L2 M DETAIL Z e C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. A c DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.jp 23 NCP380, NCV380 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. () ON Semiconductor8ZON([\Semiconductor Components Industries, LLC (SCILLC) ]P^_(`ab(cd8Ze"*f(dghijklN#$SCILLC?m klnUopqrs(tuvw)xf(yMz{oJ#o|}{P"#$SCILLC(:;e?m(~J1QS(r '1* h"#$www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC0PNAE(:;(V%x!"#$SCILLC1 0?(MN(:;(~, 1Q}PQg'"*g(:;g1Q( '23*?MM M0/¡JPQ1 0¢£%xN¤"¥ ¦$SCILLC>q§OF&¨.(©lªM«<=>¬®q¯°WQR0%x¢!±²(.¢X(³´°!µ#¨ .!"#$©lªM«<=>¶·#¸Q(TU<=>0¬®q¯3Qg(¹º»¼½g1Q¾¿ÀF&°gÁ1 P"#$SCILLC_(?mo_(f(o|(S1 0=âmÄP"¥¦$SCILLC:;ÅÆÇ(ÈÉMÊËMx#qGÌÇ(2ÍÎÏ MxP*¬®q¯"*SCILLC:;(ÐÑ,°ÒÓÔ(ÕÖ×%!Y°0¬®q¯0ØÇ(ÙÚP*ÛÜF&Qg'"*%&' JxPQg!"¥¦$g%(°0ÙÚF&*¢(N01m¨F&Q101¬®q¯SCILLC:;ÝÞ"*P*+,*xSCILLC _(ß;(ÛÜ"*:àáPQ´âW*xãäF&*xPQ¢_(°0ÙÚ¥å"*æm¨(áçP*ÒÓÔ 'èM23#¸ Q(rÌé/¡³ég°Zêëìí0Øg(g1QîïgÁ11*P"#$"*SCILLCx_(ðñòuñ`abáçabóôõJ PQ1 0/¡¢01¢(xP"#$SCILLCö-a÷Ôeø@ùúöãN#$%(ûí~F&'ünUoý(Jx0WQg!1 0þý°W Q¢ÿ販#%xN¤"¥¦$ PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. 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