1. Ingeniería

TGA2612
6-12 GHz GaN LNA
Applications
 Commercial and Military Radar
 Communications
Product Features
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Functional Block Diagram
Frequency Range: 6–12GHz
NF: < 1.8dB (1.5dB midband)
P1dB: 20dBm
OTOI: 29dBm
Small Signal Gain: >22dB
Return Loss: >7dB
Bias: VD = 10V, IDQ = 100mA, VG = -2.3V Typical
Chip Dimensions: 2.1 x 1.5 x 0.10mm
2
J1
RF In
1
3
J2
RF Out
4
Performance features are typical across frequency, under
recommended bias and at 25°C carrier backside.
General Description
Pad Configuration
TriQuint’s TGA2612 is a broadband Low Noise
Amplifier fabricated on TriQuint’s production 0.25um
GaN on SiC process (TQGaN25). Covering 6–12GHz,
the TGA2612 typically provides P1dB of 20dBm,
greater than 22dB of small signal gain, 1.5dB noise
figure (mid-band) and 29dBm OTOI. In addition to the
high electrical performance, this GaN amplifier also
provides a high level of input power robustness. Able
to survive up to 2W of input power without performance
degradation, TriQuint’s TGA2612 provides flexibility
regarding receive chain protection resulting in lower
costs and reduced board space.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2612 is ideally suited
for both military and commercial radar and
communications applications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
Pad No.
Symbol
1
2
3
4
RF In
VD
RF Out
VG
Ordering Information
Part
TGA2612
- 1 of 12 -
ECCN
EAR99
Description
6 – 12 GHz GaN LNA
Disclaimer: Subject to change without notice
www.triquint.com
TGA2612
6-12 GHz GaN LNA
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Power Dissipation, 85 °C (PDISS)
Input Power, CW, 50 Ω, (PIN)
Channel temperature (TCH)
40V
-5 to 0V
250mA
-1 to 7mA
6W
34dBm
275°C
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
Drain Current (IDQ)
Gate Voltage (VG)
10V
100mA
-2.3V Typical
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed overall operating
conditions.
320°C
-55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
0
Test conditions unless otherwise noted: 25 C, VD = 10V, IDQ = 100mA, VG = -2.3V Typical
Parameter
Operation Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Noise Figure
Output Power at 1 dB Gain Compression
Output TOI
Gain Temperature Coefficient
Noise Figure Temperature Coefficient
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
Min
Typical
6.0
>22
>7
>10
<1.8
20
29
-0.044
-0.009
- 2 of 12 -
Max
Units
12.0
GHz
dB
dB
dB
dB
dBm
dBm
dB/°C
dB/°C
Disclaimer: Subject to change without notice
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TGA2612
6-12 GHz GaN LNA
Thermal and Reliability Information
Parameter
Test Conditions
(1)
Thermal Resistance (θJC)
Channel Temperature, TCH (Without RF)
Median Lifetime (TM)
Value
16
Tbaseplate = 85°C, VD = 10V, IDQ = 100mA,
101
PDISS =1W
7.9 x 10^11
(1)
Thermal Resistance (θJC)
Channel Temperature, TCH (Under RF)
Median Lifetime (TM)
Tbaseplate = 85°C, VD = 10V, ID_Drive =
208mA, POUT = 26.6dBm, PDISS = 1.6W
16
111
2 x 10^11
Units
ºC/W
°C
Hrs
ºC/W
°C
Hrs
Notes:
1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo carrier using 1.5 mil 80/20 AuSn.
Median Lifetime
Test Conditions: VD = 40V; Failure Criteria is 10% reduction in ID_MAX
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 3 of 12 -
Disclaimer: Subject to change without notice
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TGA2612
6-12 GHz GaN LNA
Typical Performance
Conditions unless otherwise specified: VD = 10V, IDQ = 100mA, VG = -2.3V Typical
Gain vs. Frequency vs. Temperature
34.0
Input Return Loss vs. Freq. vs. Temp.
0
- 40 °C
30.0
-5
26.0
-10
+25 °C
S11 (dB)
S21 (dB)
+85 °C
22.0
18.0
-15
-20
- 40 °C
14.0
-25
+25 °C
+85 °C
10.0
-30
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
5.0
6.0
7.0
8.0
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
0
9.0
10.0
11.0
-5
30.0
-10
26.0
S21 (dB)
S22 (dB)
13.0
Gain vs. Frequency vs. VD
34.0
IDQ = 100mA
Temp. = 25 C
-15
22.0
20V
18V
16V
14V
12V
10V
18.0
-20
- 40 °C
+25 °C
-25
14.0
+85 °C
10.0
-30
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
5.0
13.0
6.0
7.0
Frequency (GHz)
8.0
9.0
12.0
13.0
-40 C
30.0
Noise Figure (dB)
3
26.0
22.0
140mA
120mA
100mA
80mA
60mA
14.0
11.0
Noise Figure vs. Freq. vs. Temperature
3.5
VD = 10V
Temp. = 25 C
18.0
10.0
Frequency (GHz)
Gain vs. Frequency vs. IDQ
34.0
S21 (dB)
12.0
Frequency (GHz)
+25 °C
+85 °C
2.5
2
1.5
1
VD = 10 V, IDQ = 100mA
10.0
0.5
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
5.0
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
Frequency (GHz)
Frequency (GHz)
- 4 of 12 -
Disclaimer: Subject to change without notice
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TGA2612
6-12 GHz GaN LNA
Typical Performance
Conditions
Conditionsunless
unlessotherwise
otherwisespecified:
specified:VVDD==10
10V,
V, IIDQ
DQ =
= 125
100mA,
mA, V
VGG == -2.3V
-2.3 VTypical
Typical
Noise Figure vs. Frequency. vs. VD
3
Temp. = +25 °C
2.8
Temp. = +25 °C
VD = 10 V
2.8
2.6
Noise Figure (dB)
2.6
Noise Figure (dB)
Noise Figure vs. Frequency vs. IDQ
3
IDQ = 100mA
2.4
2.2
2
1.8
1.6
1.4
2.4
2.2
2
1.8
1.6
1.4
6V
1.2
10V
12V
14V
16V
18V
20V
1.2
1
IDQ=60mA IDQ=80mA IDQ=100mA IDQ=120mA IDQ=140mA
1
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
5.0
6.0
7.0
Frequency (GHz)
PSAT vs. Frequency vs. Temperature
9.0
10.0
11.0
13.0
PSAT vs. Frequency. vs. VD
32
30
29
28
26
26
24
23
6V
8V
10V
12V
14V
16V
18V
20V
20
- 40 °C
+25 °C
22
17
+85 °C
PIN = 12dBm
Temp. = +25 °C
IDQ = 100 mA, PIN = 12dBm
14
20
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
5.0
13.0
6.0
7.0
P1dB vs. Frequency vs. Temperature
25
8.0
9.0
10.0
11.0
13.0
P1dB vs. Frequency. vs. VD
25
Temp. = +25 °C
VD = 10 V, IDQ = 100 mA
22
21
19
P1dB (dBm)
23
19
17
16
6V
8V
10V
12V
14V
16V
18V
20V
13
- 40 °C
+25 °C
15
12.0
Frequency (GHz)
Frequency (GHz)
P1dB (dBm)
12.0
VD = 10 V, IDQ = 100 mA
PSAT (dBm)
PSAT (dBm)
32
8.0
Frequency (GHz)
10
+85 °C
IDQ = 100 mA
13
7
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
5.0
Frequency (GHz)
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
Frequency (GHz)
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2612
6-12 GHz GaN LNA
Typical Performance
Conditions unless otherwise specified: VD = 10V, IDQ = 100mA, VG = -2.3V Typical
Gain vs. Input Power vs. Frequency
30
Temp. = +25 °C
Temp. = +25 °C
27
VD = 10 V, IDQ = 100 mA
230
Drain Current (mA)
Gain (dB)
ID vs. Input Power vs. Frequency
260
VD = 10 V, IDQ = 100 mA
24
21
18
6.0 GHz
8.0 GHz
15
200
6.0 GHz
170
10.0 GHz
12.0 GHz
8.0 GHz
140
110
10.0 GHz
12.0 GHz
12
80
-15
-12
-9
-6
-3
0
3
6
9
12
-15
-12
-9
Input Power (dBm)
-6
-3
0
3
6
9
12
Input Power (dBm)
Output Power vs. Input Power vs. VD.
32
IDQ = 100mA
Temp. = +25 °C
Output Power (dBm)
28
24
20
6V
8V
10V
12V
14V
16V
18V
20V
16
12
Frequency = 9 GHz
8
-15
-12
-9
-6
-3
0
3
6
9
12
Input Power (dBm)
OTOI vs. Frequency vs. Temperature
35
33
29
31
OTOI (dBm)
OTOI (dBm)
PIN =-20 dBm, 10 MHz Tone Spacing
Temp. = +25 °C
32
26
23
OTOI vs. Frequency vs. VD
35
PIN =-20 dBm, 10 MHz Tone Spacing
- 40 °C
29
6V
8V
10V
12V
14V
27
+25 °C
20
25
+85 °C
VD = 10V, IDQ = 100mA
IDQ = 100mA
17
23
6.0
7.0
8.0
9.0
10.0
11.0
12.0
6.0
Frequency (GHz)
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
7.0
8.0
9.0
10.0
11.0
12.0
Frequency (GHz)
- 6 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2612
6-12 GHz GaN LNA
Typical Performance
Conditions unless otherwise specified: VD = 10V, IDQ = 100mA, VG = -2.3V Typical
OTOI vs. Frequency vs. ID
38
PIN = -20 dBm, 10 MHz Tone Spacing
35
-40
32
-50
29
IDQ=60mA
26
IDQ=100mA
IDQ=120mA
IDQ=140mA
23
20
7.0
8.0
9.0
10.0
11.0
-60
-70
IDQ=80mA
6.0
IM3 vs. Frequency vs. Temperature
-30
VD = 10V, PIN =-20 dBm, 10 MHz Tone Spacing
IM3 (dBc)
OTOI (dBm)
Temp. = +25 °C
- 40 °C
+25 °C
-80
+85 °C
VD = 10V, IDQ = 100mA
-90
12.0
6.0
7.0
8.0
Frequency (GHz)
IM3 vs. Output Power vs. Frequency
0
Temp. = +25 °C
12.0
VD = 10 V, IDQ = 100 mA, 10 MHz Tone Spacing
-10
6 GHz
8 GHz
-20
11.0
-20
10 GHz
IM3 (dBc)
IM3 (dBc)
-10
10.0
IM3 vs. Input Power vs. Frequency
0
VD = 10 V, IDQ = 100 mA, 10 MHz Tone Spacing
Temp. = +25 °C
9.0
Frequency (GHz)
12 GHz
-30
-30
-40
-40
-50
-50
6 GHz
8 GHz
10 GHz
12 GHz
-60
-60
2
4
6
8
10
12
14
16
18
20
22
-20
Output Power per Tone (dBm)
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
-16
-12
-8
-4
0
4
8
12
Input Power per Tone (dBm)
- 7 of 12 -
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TGA2612
6-12 GHz GaN LNA
Application Circuit
C10
0.01 uF
2
VD = 10 V,
IDQ = 100 mA
1
J1
RF In
3
J2
RF Out
4
VG = -2.3 V
Typical
R8
4 Ohm
C8
1 uF
C12
0.01 uF
Bias-up Procedure
Bias-down Procedure
1. Set ID limit to 230mA, IG limit to 1mA
2. Apply -5V to VG for pinch off
3. Apply +10V to VD
1. Turn off RF signal
2. Reduce VG to -5V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Adjust VG more positive until IDQ = 100mA (VG ~ -2.3
V Typical)
4. Turn off VD supply
5. Apply RF signal
5. Turn off VG supply
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 8 of 12 -
Disclaimer: Subject to change without notice
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TGA2612
6-12 GHz GaN LNA
Assembly Drawing
VD = 10 V,
IDQ = 100 mA
C10
0.01 uF
RF In
2
RF Out
3
1
4
VG = -2.3 V
Typical
R8
4 Ohm
C8
1 uF
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
C12
0.01 uF
- 9 of 12 -
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TGA2612
6-12 GHz GaN LNA
Mechanical Drawing & Bond Pad Description
2
3
1
4
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad
Symbol
1
RF In
0.098 x 0.198
2
VD
0.098 x 0.098
Input; matched to 50 ohms
Drain voltage, VD. Bias network is required; see Application
Circuit on page 8 as an example.
3
RF Out
0.098 x 0.198
Output; matched to 50 ohms
4
VG
0.098 x 0.098
Gate voltage, VG. Bias network is required; see Application
Circuit on page 8 as an example.
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
Pad Size
Description
- 10 of 12 -
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TGA2612
6-12 GHz GaN LNA
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2612
6-12 GHz GaN LNA
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Caution! ESD-Sensitive Device
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
ESD Rating: TBD
Value:
TBD
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ECCN
US Department of Commerce: EAR99
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 12 of 12 -
Disclaimer: Subject to change without notice
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